Gallium nitride (GaN) is considered to be the most influential semiconductor innovation since silicon, which can operate at much higher voltages than traditional semiconductor materials. Higher voltages mean higher efficiency, 50 GaN-based RF power amplifier products and attenuators have lower power consumption and generate less heat. GaN-based amplifiers are becoming increasingly popular as more and more RF component suppliers using GaN provide reliable rf amplifier products for the market.
This technology is very important for the development of active electronically scanned array(AESA) radar systems. AESA is a fully active array that contains hundreds or even thousands of antennas, each with phase and gains control. These radar systems use phased array transmitters and receiversto electronically manipulate the beam without physically moving the antenna. These types of radar systems are gaining popularity due to their higher target power, spatial resolution and robustness compared to other conventional radars. For example, if a component in the array fails, the radar cancontinue to work. The use of GaN amplifiers in AESA radars is increasing, providing better performance and achieving the same output power in a smaller form factor and lower cooling requirements.
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