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Assessment of gallium nitride development

Jun. 17, 2020

From R&D to commercial applications, the development of gallium nitride is a disruptive technological innovation that affects the entire microwave andradio frequency industry today. Gallium nitride has a clear and profound impact on the system performance, size and weight of many RF applications,and has realized system-level solutions that cannot be achieved with traditional semiconductor technology. Its market potential has just begun to beconcerned.

Assessment of gallium nitride development

GaN is now positioned to cover mainstream applications in the commercial radio frequency field from wireless base stations to radio frequency energy.It has evolved from a sophisticated technology to the mainstay of the market. This development process combines multiple factors and is unanimouslyplayed. The result of action. GaN's performance advantages were once offset by high costs. Recently, it has successfully distinguished itself with itsoutstanding progress in GaN-on-silicon technology, supply chain optimization, device packaging technology, and manufacturing efficiency. It has becomethe most popular in RF applications. The most cost competitive material that can replace gallium arsenide and LDMOS.


The performance of GaN combined with the cost structure of silicon will accelerate innovation in the RF field and open up new business opportunitiesfor the market. Among them, the most important will be the application of radio frequency energy, which uses controlled electromagnetic radiation toheat items or provide kinetic energy for various processes. At this stage, this energy is generally generated by the magnetron. In the future, it will beproduced by an all-solid-state RF semiconductor chain.


Solid-state RF energy has many advantages not found in other solutions: low-voltage drive, semiconductor reliability, small form factor, and "all-solid-state electronics" footprint. The most striking features of solid-state radio frequency energy, especially its rapid frequency, phase, and power agility, aresupplemented by ultra-high accuracy. Overall, these technical features have created an unprecedented range of process control, even energydistribution, and rapid adaptation to changing load conditions.


It has been proven that RF energy is an efficient and accurate heat source and power source, which can be used in a wide range of commercialapplications, such as microwave ovens, car ignition, lighting systems, and including RF plasma lighting, material drying, heating and ablation of blood andtissues, etc. Including industrial, scientific and medical (ISM) applications. The RF devices that support these systems must achieve the best balance of performance, power efficiency, small form factor, and reliability, and the price point is suitable for mainstream commercial promotion. GaN-on-silicon is the ideal choice. With a power output capability of up to 300W and a rugged plastic package, the fourth-generation GaN power transistor has undoubtedly become a cost-effective and reliable solution.


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